Abstract
The chemical etching of two types of polyvinylidene fluoride (PVDF) film irradiated with heavy ions was studied. Several etchants have been investigated in this work. It was found that for a solution of KOH +KMnO 4 the radial etch rate (RER) is larger than for solutions used by other authors. This new solution for etching PVDF is used both for microfilter and for track detector purposes. Even alphas from a thick uranium foil register in solef PVDF by using this solution. As expected the RER for alphas is considerably lower than that for heavy ions. The diameter of the sandglass shaped pores at the surface of the film as a function of the etching time for various concentrations of KMnO 4 and KOH and at different temperatures was measured.
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