Abstract
Abstract A new model has been proposed to evaluate the chemical driving force for diffusion-induced recrystallization (DIR) or diffusion-induced grain boundary migration in the A(B) system, where elements A and B are nonvolatile at solid-state reaction temperatures. The experimental results for DIR in the Ag(Sn) and Cu(Ni) systems in previous studies have been numerically analyzed using the new model. The analyses indicate that a region with discontinuously different composition is formed by DIR in the early stages of the reaction with the maximum driving force.
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