Abstract
Field-Effect Transistor Chemical-free and clean doping methods for 2D semiconducting materials are developed by Min Sup Choi, Won Jong Yoo, and co-workers in article number 2100449. The p- and n-doping in 2D field-effect transistors are observed by annealing and e-beam irradiation, attributed to the absorption of oxygen molecules and charge trapping at the interfaces, respectively.
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