Abstract
High-temperature in situ galvanomagnetic measurements are reported in chlorine-doped CdTe, [Cl] ≈4 × 1018 cm−3 at temperatures T = 600–700 °C near Cd saturation. The chemical diffusion coefficient is determined by means of relaxation of electrical conductivity after a step-like change of ambient Cd pressure (PCd) and approximated well by a trial function . Both and equilibrium conductivity are calculated on the basis of a defect model in which donors ClTe are compensated by divalent acceptors Cd vacancies (VCd) and monovalent acceptor complexes (ClTeVCd). The properties of native point defects are consistent with undoped CdTe. It is shown that can be fit well assuming different diffusion coefficients for singly and doubly charged VCd.
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