Abstract
Thin films Cd 1−x Hg x S alloys have been prepared by chemical co-deposition from thiourea solutions. By increasing the Hg content in the alloys the bandgap of the mixed semiconductor was reduced to a value of 1.8 eV, approaching that of n-CdSe. The stability of the films in polysulphide under illumination was also tested and encouraging results were obtained.
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