Abstract
In general, fluorinated antisticking layers (F-ASL) are deposited on the imprint stamps to ease their separation from the imprinted resist in UV nanoimprint lithography. However, these layers are found to degrade with repeated imprint operations. A drastic decrease in fluorinated species is observed on the mold surface. Yet, there is still a debate on the nature of the exact mechanisms involved in this degradation. In this paper, electron spin resonance (ESR) is used to investigate the chemical reaction occurring between the fluorinated molecules and the UV curable resist. Free radicals of the resist, generated under UV illumination, have been observed by ESR. The decrease in their corresponding signal in the presence of fluorinated ASL species shows evidence of the chemical reactivity of the resist toward the F-ASL.
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