Abstract
This paper re-examines the data produced in a study of the behaviour of thick film resistors on dielectrics. It uses the published data to investigate the physicochemical nature of the conduction in six combinations of resistors on dielectrics and alumina. The results appear to confirm earlier observations that the presence of barium oxide in thick film resistor glass matrices has a major impact on the conduction mechanism. It is suggested that the cause is the totally different nature of two ions of similar size, possibly giving rise to localized regions of barium-lead compounds.
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