Abstract
Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and N 2 O are systematically compared. Two distinct N 1s components are resolved for both films with a binding-energy difference of ∼0.61 eV, which are assigned to the N atoms at the interfaces and those in the SiO 2 matrix. Both components are unambiguously attributed to represent a N-Si 3 like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between N 2 O- and NO-nitrided films and the interface suboxide species identified by Si 2p core levels are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
