Abstract
Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and N 2 O are systematically compared. Two distinct N 1s components are resolved for both films with a binding-energy difference of ∼0.61 eV, which are assigned to the N atoms at the interfaces and those in the SiO 2 matrix. Both components are unambiguously attributed to represent a N-Si 3 like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between N 2 O- and NO-nitrided films and the interface suboxide species identified by Si 2p core levels are discussed.
Published Version
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