Abstract
We have used quantitative chemical mapping to determine the chemical abruptness of interfaces in In0.2Ga0.8As/Al0.2Ga0.8As strained multilayers grown by metalorganic chemical vapor deposition. We observe a large difference in the interfacial width, depending on the order in which successive layers are grown; the (Al0.2Ga0.8As on In0.2Ga0.8As) interface is twice as wide as the (In0.2Ga0.8As on Al0.2Ga0.8As).
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