Abstract
A surface texturing based on nozzle-sprayed microspheres and spin-coated dielectric film was prepared for the purpose of omnidirectional light-trapping. An indium tin oxide (ITO) was applied as the antireflection coating (ARC). From the XPS results, the inter-diffusions of Si, O, and In atoms at ITO/Si junction are suppressed by the HCl pretreatment. The cell efficiency (η) with varying light incident angles from 0 to 60° was improved. Due to lack of oxygen atom at the ITO/Si interface with pretreatment, the sub-peak intensity ratio of binding energies at 531.9–530.4 eV becomes larger. The enhanced current transport with respect to the binding energy of O– state was studied. The oxygen vacancy at the silicon surface plays an important role in short circuit current (J SC) and efficiency for the omnidirectional silicon solar cells.
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