Abstract
High purity InP layers have been grown by chemical beam epitaxy (CBE) using H 2 as the carrier gas for transporting the metal alkyl TMI into the growth chamber. InP layers exhibiting Hall mobility as high as 238,000 cm 2/V·s at 77 K and with a peak value of 311,000 cm 2/V·s at 50 K and residual impurity concentration of 6×10 13 cm −3 at 77 K were grown at 500°C using low V/III ratio (2.2) and PH 3 cracking cell temperature of 950°C. These values are the highest mobility values ever reported for InP grown by any molecular beam technique. Selective embedded growth (SEG) of InP and InGaAs was achieved in 2.0 μm deep trenches opened in Si 3N 4 masks on InP substrates. Overgrowth of InP on corrugated InP substrates was also achieved without damaging the surface grating profile.
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