Abstract
Triethylgallium and precracked tertiarybutylarsine (TBAs) were used as precursors for the chemical beam epitaxial growth of GaAs. The main decomposition products of TBAs are AsH free radicals, AsH 3, isobutane and isobutene. Growth rates up to 0.68 monolayers s −1 were obtained. All the grown layers show p-type conductivity with a background acceptor concentration in the mid 10 16 cm −3 range with a compensation ratio of about 0.3. Photoluminescence spectra show that carbon is the main acceptor impurity.
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