Abstract
ALInAs has been grown by CBE technique for ultra-fast switching device applications. The materials were grown in the temperature range of 693–803 K and a low growth rate of 0.3 μm/h was employed in order to enhance the surface ad-atom residence time. The grown materials have excellent crystallographic and optical properties as studied by HRXRD and low temperature photoluminescence (LT PL) measurements. There is no suitable electrolyte available to successfully profile the dopants in AlInAs by ECV method. An effort has been made to develop an appropriate electrolyte for profiling AlInAs material. A number of electrolytic solutions were investigated and among the probed solutions, two different electrolytes namely HNO 3:H 2O 2::HF:H 2O and NH 4F have been realised. Both have very low electrolytic resistance and a low free chemical etch rate values with good I– V and C– V characteristics. Using these electrolytes, the estimated carrier concentration value were in very good agreement with independently measured HALL effect measurement values. But the ECV measured thickness value does not agree well with that of stylus profiler measurement thickness value. This discrepancy has been explained on the basis of etching properties of aluminium containing compounds during electrochemical etching process.
Published Version
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