Abstract
Herein, the scalable chemical bath deposited NiOx‐NiSO4 heterostructured films are reported as the efficient hole transport layers (HTLs) in perovskite solar cells. The NiOx‐NiSO4 films show excellent hole extraction ability and reduce interfacial charge recombination in solar cell devices. By using NiOx‐NiSO4 HTLs, a high power conversion efficiency of 20.55% is obtained, which is about 12.23% greater than that of the pure NiOx transport layer. This study provides a simple solution‐processing route toward the large‐area production and fabrication of full inorganic transport layers for perovskite photovoltaics.
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