Abstract

We investigated the chemical bath deposition of US thin flims on the Cu(In,Ga)Se 2 (GIGS) absorber layers and glasses. The process of the chemical bath deposition of US layer affected the performance of the CIGS solar cells. The CdS layers were deposited on the CIGS film from CdI 2, thiourea (NH 2CSNHn 2) and ammonia solutions. The influence of pH on the chemical bath deposition process was studied. The surfaces of the US films were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The compositions of the obtained CdS layers were analyzed by Auger electron spectroscopy (AES). The performance of the CIGS solar cells was discussed on the basis of the characteristics of the chemical bath deposited layer. We have successfully fabricated a high-efficiency CIGS solar cell with an efficiency of 17% using a US layer with stoichiometric composition.

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