Abstract

A physicochemical analysis on the chemical bath solution for Zn(S,OH,O) thin films deposition is discussed in this work. The effect of three temperatures closed to the ambient (25, 40 and 55 °C) and three HS−/Zn(OH) 4 2− ion concentration ratios (1, 1.5 and 2) on the growth and physical properties of the deposited ZnS was investigated. The species distribution diagrams and solubility curves obtained at these conditions are the key for determining the best conditions. Thus, conditions for obtaining high quality ZnS films by chemical bath deposition technique are reported. ZnS films with high transmittance (80–90%) and band gap energy of 3.68 eV were obtained at selected physicochemical conditions.

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