Abstract
CdTe oxide films were grown by radio frequency sputtering in Ar–N 2O plasma at different N 2O partial pressures. The film oxygen content determined by Auger electron spectroscopy ranged from 15 to 60 at.%. The free O 2 production during film deposition was monitored by in situ mass spectroscopy and it was found that it increases linearly over a critical N 2O pressure ~ 4.7 × 10 − 3 Pa alike the oxygen in the films. Film microstructure was studied by Raman spectroscopy and atomic force microscopy. Evidence of bands related to terminal Te–O vibrations was found in films prepared below the N 2O critical pressure, becoming predominant in films with higher oxygen content. The morphology and roughness evolution of the films confirm that they consist of a mixture of phases. Surface structures of the Ia-type and of the Ib-type were observed below and above the critical N 2O pressure. Eventually, ion bombardment process caused film resputtering.
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