Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors

Abstract

Chemical and electrochemical nanofabrication processes used for fabricating GaAs-based single and coupled quantum wire transistors (QWTrs) utilizing Schottky in-plane gate (IPG) structures are described. IPG and metal dot formation processes using a wet chemical etching and an in situ electrochemical process were optimized for a novel nanodevice fabrication. Fabricated single and coupled QWTrs showed conductance quantization and oscillation characteristics at low temperatures, demonstrating the tight gate control capability.