Abstract
The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x-ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride-oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
