Abstract
Negative chemical amplification resist systems composed of Novolak resin, a silanol compound, and an acid generator are investigated as deep UV resists. The acid produced in the exposed area induces the condensation reaction of silanol compounds during post-exposure baking. The condensation reaction products, siloxanes, act as an aqueous-base dissolution inhibitor, while silanol compounds in unexposed area work as aqueous base dissolution promoters. The resist composed of Novolak resin, diphenylsilanediol, and triphenylsulfonium triflate shows quite high sensitivity (-.-lmJ/cm2). Using this resist, O.3pm line-and-space patterns were obtained by KrF excimer laser stepper with 3mJ/cm2 dose.
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