Chemical activity of oxygen atoms in the magnetron sputter-deposited ZnO films

Abstract

The role of oxygen atoms in the growth of magnetron sputter-deposited ZnO films was studied by alternating the deposition of a several-nanometer-thick ZnO layer and an O 2/Ar mixed plasma exposure, i.e., a layer-by-layer (LbL) technique. The film crystallization was promoted by suppressing the oxygen vacancy and interstitial defects by adjusting the exposure conditions of the O 2/Ar plasma. These findings suggest that the chemical potential of the oxygen atom influences the film crystallization and the electronic state. The diffusion and effusion of oxygen atoms at the growing surface have an effect similar to that of thermal annealing, promoted film crystallization and the creation and the annihilation of oxygen- and zinc-related defects. The role of oxygen atoms reaching at the growing film surface is discussed in terms of chemical annealing and a possible oxygen diffusion mechanism is proposed.