Abstract
Applied Materials' new Precision Implant 9000 ion implantation system has been instrumented to allow the implanter to be optimized for charging performance on sensitive device structures. Instrumentation includes sensors for measuring beam profiles, chamber pressure and gas constituents, current collected by the wafers and an independent beam stop, and surface charging of individual wafers. Work described includes characterization of effects of flooding techniques on common simple structures as well as complex test structures. Basic data on oxide coated wafers, poly on oxide, poly islands on oxide, photoresist, and typical complex structures is presented. Flooding techniques studied include electron gun, electron gun with inert gas feed and simulated photoresist burst, plasma bridge and gas neutralization. A theoretical model for charging damage mechanisms is developed and compared with experimental results with good agreement on typical MOS gate structures. The model is currently being implemented as an expert charging advisor to assist production personnel in diagnosing charging problems and optimizing processing parameters. Results obtained show the Precision Implant 9000 can be used on sensitive device structures at beam currents of 30 milliamps.
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