Abstract
We demonstrate charging of a single InAs/GaAs quantum dot (SQD) via bias controlled electron tunneling from a n-doped ZnMnSe spin aligner. The single dot photoluminescence spectra show clear signatures of single charged exciton emission X − and the intensity ratio between charged and neutral exciton can be controlled via the external bias. These data emphasis that, in spite of the complications of the conduction band offset between ZnMnSe and GaAs, a SQD charging is feasible in this II–VI–III–V hybrid structure.
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