Abstract
We have investigated the current conduction of NiO thin film embedded with Ni nanocrystals (nc-Ni) and the influence of charging in the nc-Ni/NiO thin film on the current transport. The hole trapping in the thin film under a negative charging voltage is found to greatly increase the current conduction measured at a positive voltage due to the enhancement of electric field at the interface between the thin film and Si substrate. Moreover, the current–voltage (I–V) characteristic follows a power-law relationship. In addition, the dc resistance of the thin film strongly depends on the magnitude of the charging voltage and charging time. These results could be used to realize a charging-controlled resistive memory effect.
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