Abstract
Abstract The memory charging effect of the nano-floating gate capacitor containing the In 2 O 3 nano-particles embedded in polyimide layer was characterized. Self-assembled In 2 O 3 nano-particles were created by chemical reaction between the polymer precursor and indium film, and then the particles size and density were about 7 nm and 5.8 × 10 11 cm −2 , respectively. From capacitance–voltage hysteresis originated from electrons charging in the In 2 O 3 nano-particles through tunneling oxide from p-type Si wafer, the flat-band voltage shift was obtained up to about 3.4 V, when the sweeping gate voltage was from −6 to 6 V. The endurance ability of this capacitor showed up to 2 × 10 5 cycles during the programming at 5 V for 0.2 ms and erasing at −5 V for 1.8 ms processes.
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