Abstract
We present results on spectrally resolved photo-resistance studies of optically induced charge storage effects in self-organized InAs quantum dots (QDs). The stored charge can be detected and erased electrically. Our results show that spectrally resolved optical QD charging provides information on carrier dynamics in the QDs. We find a difference in the charge redistribution effect within the inhomogeneous distribution of the QD ground state ensemble for stored electrons as compared to stored holes at a given temperature. For electron storage the spectrally resolved photo-resistance measurements show a shift of the stored charge ensemble with respect to the PL emission spectrum of the QD ensemble. For hole storage a symmetric broadening of the stored charge ensemble is found.
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