Abstract

The kinetics of charging and discharging of charge carriers in a memory device based on gold nanoparticles in self-assembled block copolymer of poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) has been studied. Hole trapping is observed to be more efficient than electron trapping and is attributed to a lower electron injection current (due to presence of Schottky barrier between the gold electrode and P4VP layer). At higher electric fields (>0.4 MV/cm), quasi-two-dimensional charge transport through the arrays of gold nanoparticles in P4VP nanodomains is observed. The contribution of electrode work function was demonstrated with improved electron charging by the replacement of gold electrode with aluminum.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call