Abstract
Experimental and theoretical capacitance-voltage (C-V) curves for the Al/PI/multiple-stacked Ni <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Fe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> nanoparticle arrays/Pl/p-Si (100) structures at 300 K showed that the flatband voltage shift of the metal-insulator-semiconductor capacitor was affected by the value of the sweep voltage, indicative of the variations of the charged electron density in the multiple-stacked Ni <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Fe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> nanoparticle arrays. Experimental and theoretical current-voltage (I-V) results showed that the current increased with increasing applied voltage due to thermally assisted tunneling effect. Charging and discharging mechanisms of vertically stacked Ni <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Fe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> self-assembled nanoparticle arrays embedded in PI layers are described on the basis of the C-V and I-V results.
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