Abstract
The electronic properties of hydrogen in carbon-doped n-type silicon have been studied using deep-level transient spectroscopy. The results show for the first time that hydrogen in the presence of carbon forms a deep and charge-state-dependent center located \ensuremath{\sim}0.16 eV below the edge of the conduction band. This trap center is a deep donor which is only stable in the positively charged state and anneals after capture of electrons for temperatures T\ensuremath{\ge}300 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
