Abstract
In this invited contribution, we review recent results and report on the phase transitions and de-pinning of the charge-density waves in single-crystal 1T-TaS<sub>2</sub> thin-film and 1T-TaS<sub>2</sub> / <i>h</i>-BN heterostructure devices. It is known that 1T-TaS<sub>2</sub> reveals charge-density-wave phases below and above room temperature. The de-pinning of the charge-density waves in the quasi-2D materials is different from that in “conventional” bulk charge-density-wave materials with quasi-1D motifs in the crystal structure. The de-pinning process in 1T-TaS<sub>2</sub> is not accompanied by an observable abrupt increase in electric current – in contrast to de-pinning in the conventional charge-density-wave materials with the quasi-1D crystal structure. The obtained results contribute to the development of the charge-density-wave devices for applications in electronics and optoelectronics.
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