Abstract
The electron mobility limited by charged surface states scattering was calculated accurately based on a self-consistent Schrödinger and Poisson equations solver. For a AlGaN thickness less than 5nm, this new scattering mechanism is the dominated scattering for electron mobility. Moreover, there is a “high electron mobility window” for a certain AlGaN thickness range from 4 to 7nm, where the electron mobility can be as high as 3000cm2/Vs at a low temperature, which is consistent with reported experimental data [1] (Cao and Jena, 2007).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
