Abstract
The mobilities of electrons have been measured from 15 K to 300 K on CZ-silicon crystals, which are initially P-type and then transformed into N-type after being heat-treated at 670 and 720°C, respectively. It has been found that the mobilities of electrons depend on the heat-treatment regime in a complicated manner provided the ionized impurity scattering is predominant. Based upon the model of new donors proposed, a new scattering process caused by charged precipitate is assumed. The theoretical calculations for mobilities of electrons were in agreement with experimental data and therefore the reliability of the assumption was demonstrated.
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