Abstract
The morphology of a single charged domain wall, appeared under the action of composition gradients produced by partial VTE procedure by Cherenkov-type second harmonic generation microscopy, was observed in detail. The width of the charged domain wall was estimated as 70 μm. Non-through and through narrow domains, grown from the charged domain wall, were revealed. The maximum length of non-through domains with submicron diameter was about 100 μm. The growth of narrow domains from the charged domain wall was demonstrated and attributed to the action of pyroelectric field. The widening of domains occurred after achieving the polar surface.
Highlights
Formation of the initial domain structure during zero field cooling from the temperature above the transition point in ferroelectric crystals depends on many factors, one of which is a spatial nonuniformity of the material composition [1,2,3,4,5]
The morphology of a single charged domain wall, appeared under the action of composition gradients produced by partial vapour transport equilibration (VTE) procedure by Cherenkov-type second harmonic generation microscopy, was observed in detail
We have shown recently that the single charged domain wall was formed during phase transition in lithium tantalate (LiTaO3, LT) with artificially produced composition gradient [10,11]
Summary
Formation of the initial (as-grown, virgin) domain structure during zero field cooling from the temperature above the transition point in ferroelectric crystals depends on many factors, one of which is a spatial nonuniformity of the material composition [1,2,3,4,5]. Crystal inhomogeneities, such as point defects [6], growth layers [1,2,3], etc., influence the polarization reversal process due to variations of physical properties and lattice imperfections. We present the first detail observation of the morphology of single charged domain wall appeared under the action of composition gradients produced by partial VTE procedure
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More From: IOP Conference Series: Materials Science and Engineering
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