Charge-coupled CMOS and hybrid detector arrays

Abstract

Over a decade has passed since complementary metal oxide semiconductor (CMOS) imaging detectors made their move into the charge-coupled device (CCD) arena. Low cost, low power, on-chip system integration, high-speed operation and tolerance to high-energy radiation sources are unique features that make CMOS detectors popular. However, it remains unclear if CMOS arrays can compete with the CCD in high performance applications (e.g., scientific). This paper compares fundamental performance parameters common to both CMOS and CCD imagers, and lists specific SMOS performance deficiencies that prevent the technology from high end use. In this paper we will present custom CMOS pixel designs and related fabrication processes that solve most deficiencies. We will also discuss hybrid imaging arrays that marry the advantages of CCD and CMOS producing sensors with superior performance in comparison to CCD and CMOS bulk monolithic sensors. CCD to CMOS, CMOS to CMOS and CMOS SOI hybrids are reviewed.