Abstract
The paper outlines the charge-based core and the architecture of the BSIM5 MOSFET model for sub-100 nm CMOS circuit simulation. The BSIM5 model is a continuous, completely symmetric and accurate non charge-sheet based MOS transistor model derived from the basic device physics, including various physics effects. Comparison of the inversion charge between the BSIM5 prediction and self-consistent numerical solution shows good agreement. The demonstration of fully symmetric characteristics of BSIM5, such as channel current and its high-order derivative in the Gummel symmetry test, and charge and trans-capacitances in a SPICE simulation, also implies BSIM5 is the physically symmetric MOSFET model valid for RF-analog circuit simulations.
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