Abstract
Recently, the memory effect was observed in Er stabilized β-MnO2 metal oxide semiconductor structure. In this work, the electric properties and mechanism of charge tunneling and trapping are studied by combining frequency-dependent capacitance-voltage curves, variable sweep range capacitance-voltage curves, and current-voltage curves. The charge traps are identified to be deep donors in β-MnO2. The deep donor level is close to the valance band, which results in the asymmetric enlargement in variable sweep range capacitance-voltage curves. Resonant tunneling and Fowler-Nordheim tunneling mechanisms are observed at low and high voltages, respectively. All these phenomena can be explained by the proposed model as a whole. The experimental evidence shows that Er-stabilized β-MnO2 is a good candidate charge storage material in nonvolatile memory devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
