Abstract
The trapping effects of negative and positive charge in Ge-enriched SiO2 layers during high-field electron injection from the Si substrate of Al–SiO2–Si structures are studied. The capture cross section and the concentration of negatively and positively charged traps are estimated and the location of the positively charged traps is determined. It is shown that increasing rapid thermal annealing time from 6 to 150 s at 1000 °C leads to an enhanced diffusion of Ge towards the SiO2–Si interface and an increase in negatively and positively charged trap concentration. The mechanisms of the trap generation are discussed.
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