Abstract
Analysis of photoluminescence (PL) from chemically treated lead sulfide (PbS) quantum dot (QD) films versus temperature reveals the effects of QD size and ligand binding on the motion of carriers between bright and dark trap states. For strongly coupled QDs, the PL exhibits temperature-dependent quenching and shifting consistent with charges residing in a shallow exponential tail of quasi-localized states below the band gap. The depth of the tail varies from 15 to 40 meV, similar to or smaller than exponential band tail widths measured for polycrystalline Si. The trap state distribution can be manipulated with QD size and surface treatment, and its characterization should provide a clearer picture of charge separation and percolation in disordered QD films than what currently exists.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
