Abstract
Ultrathin oxynitride films have been grown on partially strain compensated Si/Si 1− x− y Ge x C y /Si layers by microwave plasma at a low temperature. Significant improvements in charge-to-breakdown ( Q BD) and charge trapping under static and dynamic electric field stress are observed for O 2/NH 3/NO-plasma treated films due to efficient removal of H species from the interface. The trapped charge generation and charge centroid show a frequency dependence for bipolar stress and polarity dependence in case of unipolar stress.
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