Abstract
The optoelectronic properties of a material are determined by the processes following light-matter interaction. Here we use femtosecond optical spectroscopy to systematically study photoexcited carrier relaxation in few-layer MoS2 flakes as a function of excitation density and sample thickness. We find bimolecular coalescence of charges into indirect excitons as the dominant relaxation process in two- to three-layer flakes while thicker flakes show a much higher density of defects, which efficiently trap charges before they can coalesce.
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