Abstract
We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels.
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