Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy

Abstract

Trapped electrons and holes, and their dynamics, were visualized from spatially resolved capacitance–voltage (C–V) curves and dC/dV images using scanning capacitance microscopy. A trapped charge of 10−16–10−18 C, localized within 2 μm diam circular test structures, was imaged. The detrapping process of the trapped electrons can be explained with a quantum-mechanical tunneling model.