Abstract
A charge-carrier trap correction technique was developed for orthogonal strip planar germanium gamma-ray detectors. The trap corrector significantly improves the gamma-ray energy resolution of detectors with charge-carrier trapping from crystal-growth defects and radiation damage. Two orthogonal-strip planar germanium detectors were radiation damaged with 2-MeV neutron fluences of ~8×109n/cm2. The radiation-damaged detectors were studied in the 60–80K temperature range.
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