Abstract
An electron irradiation assisted photoelectron emission technique was developed to study charge traps for nanolayered Si3N4 and SiO2. Sharp emission peaks were induced by electron irradiation, with characteristic energies revealing their microscopic origins. Trap energies, originating from SiO2, were observed to shift depending on the electron irradiation dose and the thickness of Si3N4 nanolayers. Improved understanding of the characteristics of these defects can be informative towards the development of high performance nanocapacitor devices, in addition to furthering understanding of non-volatile memory devices.
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