Abstract
CuInS2 nanocrystals (CIS NCs) are prospective materials for solar cells with solution-producible absorber layers. However, the charge transport through the film of nanoparticles has not been investigated in detail yet. In this paper we report the charge transport characteristics in thin films of CIS NCs investigated in single carrier device structures, namely hole-only and electron-only devices. The current density–voltage (J–V) characteristics showed that the charge carrier transport in thin CIS NC films is hole dominated. Both, Mott Gurney’s and Murgatroyd’s model were applied for better understanding.
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