Abstract
The conduction mechanism in 2,2',7,7'-tetrakis(N,N-di-4-methoxyphenyl amino)-9,9'-spirobifluoren (spiro-MeOTAD) has been studied by impedance spectroscopy (IS) by using indium tin oxide (ITO)/spiro-MeOTAD/gold (Au) hole only device. The device could be modelled by an equivalent parallel RC network with a low contact resistance Rs in series, in which the bulk geometrical capacitance above resonance frequency of spiro-MeOTAD remains unchanged while the bulk resistance Rp changes with bias voltage. Upon increasing the bias voltage the conductivity of deposited film has increased by one order of magnitude (i.e., from ∼10-9 to ∼10-8 Ω-1 cm-1) whereas the dielectric relaxation time (τ) decreased from 1.7 ×10-4 to 1.2 ×10-5 s. Capacitance spectra of hole-only spiro-MeOTAD devices indicate the validity of the Space charge limited current (SCLC) model with localised states distributed in energy and field-dependent mobility.
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