Abstract
Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.
Highlights
Semiconductor nuclear radiation detectors are finding increased use in nuclear physics, gamma-ray and X-ray astronomy, medical imaging and national security
Resolved charge collection efficiency maps have been produced for a range of detector bias voltages
Inhomogeneities in the charge transport of the cadmium manganese telluride (CdMnTe) crystals have been associated with chains of tellurium inclusions within the detector bulk
Summary
Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW, 2234 Australia 2 Brookhaven National Laboratory, Upton, NY 11973 USA 3 Faculty of Mathematics and Physics, Institute of Physics, Charles University, Ke Karlovu 5, Prague 2, CZ-121 16, Czech
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