Abstract

Charge transport in semi-insulating Pb2P2Se6 single crystals was investigated. The dark current was dominated by the ionization of deep-level defects within the gap of the material, with activation energies between 0.6 and 0.8 eV. A model for charge transport was developed where a continuum of these midgap defect levels determined the conductivity of Pb2P2Se6. Current–voltage characteristics in Pb2P2Se6 single crystals showed nonlinear behavior at high voltages. The nonlinear characteristics are attributed to competing Poole–Frenkel emission and phonon-assisted tunneling processes, such that at lower fields the former effect dominates, while at higher electric fields the latter mechanism emerges. Calculated tunneling times in the 250–500 fs range indicate that the deep traps promote weak electron–phonon coupling and that the tunneling involves deep defect levels. Transient multi-terahertz spectroscopy and temperature-dependent photoconductivity measurements reveal signatures of dispersive transport and lo...

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