Abstract
Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are recently used in many display applications due to its high mobility and high stability. However, its processing at low temperature causes defects which affect charge carrier mobility. So, it is essential to completely understand the effects of defects on charge transport mechanism. In this paper, experimental results are presented to investigate the charge carrier mobility of LTPS device. Furthermore, based on the theoretical model, the charge transport characteristic for LTPS has been interpreted. Our results show that, at low gate voltage, the charge transport of LTPS TFT displays multiple trapping and release mechanism, while free charge carrier transport mechanism at high gate voltage.
Highlights
Charge transport mechanism of the polycrystalline silicon has been discussed at low deposition temperature previously
The influence on mobility of LPTS is still ambiguous at low deposition temperature under various temperatures after construction of device
200nm buffer layer consisted of SiO2 was deposited by plasma enhanced chemical vapor deposition (PECVD) followed by 50nm a-Si:H deposited by PECVD and crystallized by excimer laser annealing
Summary
Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications such as large area electronics, active-matrix display industry, radio frequency identification tags (RFID) and logical applications. High-resolution displays constructed using the TFT technology are useful in combination with other display technologies such as organic lightemitting diodes, electronic papers, liquid crystal displays and other flat panel displays. In recent years, active matrix organic lightemitting diode (AMOLED) has attracted much attention because of its fast response time, low driving voltage, no requirement of backlight and large possible angle to view display. Low-temperature polycrystalline silicon (LTPS) is preferred for AMOLED as compared to amorphous Si TFTs because LTPS is more stable and have higher mobility as compared to amorphous Si. As compared with amorphous Si TFTs, LTPS TFTs have practical advantages of higher speed images, brightness and resolution over Si TFTs due to advantage of increased charge carrier mobility.To optimize the performance of polycrystalline silicon, a complete understanding of the transport properties for poly crystalline silicon films is indispensable. Active matrix organic lightemitting diode (AMOLED) has attracted much attention because of its fast response time, low driving voltage, no requirement of backlight and large possible angle to view display.. Low-temperature polycrystalline silicon (LTPS) is preferred for AMOLED as compared to amorphous Si TFTs because LTPS is more stable and have higher mobility as compared to amorphous Si.. Based on the transport properties, effect of trap states on field effect mobility for large grain poly silicon films has been explained.. Charge transport in polySi thin-film was investigated in more depth with respect to deposition temperature, the amorphous material and the used substrate.. Charge transport mechanism of the polycrystalline silicon has been discussed at low deposition temperature previously. The influence on mobility of LPTS is still ambiguous at low deposition temperature under various temperatures after construction of device
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